Studying Properties of SF6 Plasma

Abstract

    SF₆ plasma properties has studied SF₆ gas was used as an etching  gas .

A home built lab. Scale plasma etching system was employed to generate DC plasma. A current density as a function of etch rate vs. voltage at constant pressure and current density as a function of etch rate vs. pressure at constant voltage without wafer were obtained the topography of  etchant  Silicon - wafer i.e., anisotropy under cutting and dimension were tested .The results were : increasing the voltage and pressure led to increase the current density .